| Layisha i-voltage L+ |
- Inani elilinganiselwe (DC)
- Ukuvikelwa kokuhlehla kwe-polarity
| 24 yebo |
| Okokufaka kwamanje |
| kusuka ku-voltage yokulayisha u-L+ (ngaphandle komthwalo), ubuningi. | 340 mA |
| kusuka ebhasini le-backplane 5 V DC, max. | 100 mA |
| Ukulahlekelwa amandla |
| Ukuphelelwa amandla, thayipha. | 6 W |
| Imiphumela ye-analog |
| Inombolo yemiphumela ye-analog | 8 |
| Ukukhishwa kwe-voltage, ukuvikelwa kwesekethe emfishane | Yebo |
| I-voltage ephumayo, i-short-circuit current, ubuningi. | 25 mA |
| Okukhiphayo kwamanje, i-voltage engalayishiwe, ubuningi. | 18v |
| Amabanga wokuphumayo, i-voltage |
| • 0 kuya ku-10 V | Yebo |
| • 1 V kuya ku-5 V | Yebo |
| • -10 V ukuya ku-+10 V | Yebo |
| Ibanga lokuphumayo, lamanje |
| • 0 kuya ku-20 mA | Yebo |
| • -20 mA ukuya ku-+20 mA | Yebo |
| • 4 mA kuya ku-20 mA | Yebo |
| I-impedance yokulayisha (ebangeni elilinganiselwe lokuphumayo) |
| • ngokuphuma kwamandla kagesi, imiz. | 1 kq |
| • ngokuphuma kwamandla kagesi, umthamo we-capacitive, ubuningi. | 1 pf |
| • ngokuphumayo kwamanje, ubuningi. | 500 Q |
| • ngokuphumayo kwamanje, umthwalo we-inductive, ubuningi. | 10 mH |
| Ubude bekhebula |
| • evikelekile, ubuningi. | 200 m |
| Ukukhiqizwa kwenani le-analogi kokuphumayo |
| Ukuhlanganisa nesikhathi sokuguqulwa/ukulungiswa kwesiteshi ngasinye |
| • Ukulungiswa okunobubanzi obuningi (okuncane okuhlanganisa uphawu), ubuningi. | 12 kancane; ± 10 V, ± 20 mA, 4 mA kuya ku-20 mA, 1 V kuya ku-5 V: 11 bit + uphawu; 0 V kuya ku-10 V, 0 mA kuya ku-20 mA: 12 bit |
| • Isikhathi sokuguqulwa (ngesiteshi ngasinye) | 0.8 ms |
| Isikhathi sokumisa |
| • ngomthwalo ovimbelayo | 0.2 ms |
| • ngomthwalo we-capacitive | 3.3 ms |
| • ngomthwalo we-inductive | 0.5 ms; 0.5 ms (1 mH); 3.3 ms (10 mH) |